Infineon IPD90N04S4-05: High-Performance N-Channel MOSFET for Automotive and Industrial Applications

The relentless drive towards higher efficiency, greater power density, and enhanced reliability in automotive and industrial systems demands semiconductor components that excel under demanding conditions. The Infineon IPD90N04S4-05 stands out as a premier N-Channel power MOSFET engineered specifically to meet these rigorous challenges. This device encapsulates cutting-edge technology in a compact package, offering system designers a superior solution for a wide range of switching applications.

At the heart of this MOSFET's performance is its exceptionally low on-state resistance (R DS(on)) of just 3.5 mΩ (max. at V GS = 10 V). This critical parameter is a primary determinant of efficiency, as it directly minimizes conduction losses. When a MOSFET is switched on, a lower R DS(on) means less power is wasted as heat, leading to cooler operation and significantly higher overall system efficiency. This is paramount in applications like electric power steering (EPS), engine management units, and DC-DC converters where every watt saved contributes to improved fuel economy in vehicles or reduced thermal management overhead in industrial equipment.

Furthermore, the IPD90N04S4-05 is built using Infineon’s advanced OptiMOS™ technology. This technology provides an optimal balance between low switching losses and low gate charge (Q G). The result is a device that operates efficiently at high switching frequencies, enabling designers to shrink the size of magnetic components like inductors and transformers, thereby increasing power density. Its high robustness and avalanche ruggedness ensure operational stability even in the presence of voltage spikes and harsh transients common in 12V and 24V automotive battery systems.

Packaged in the space-saving SuperSO8 (SSO8) housing, this MOSFET offers an excellent power-to-footprint ratio. This compact form factor is crucial for modern, densely populated electronic control units (ECUs) where board space is at a premium. The device is also AEC-Q101 qualified, guaranteeing that it meets the strict quality and reliability standards required for automotive applications. This makes it equally suitable for demanding industrial scenarios, including motor drives, load switches, and power supplies.

ICGOOODFIND: The Infineon IPD90N04S4-05 is a top-tier N-Channel MOSFET that sets a high benchmark for performance in demanding environments. Its standout combination of ultra-low R DS(on), high switching efficiency, automotive-grade qualification, and compact packaging makes it an exceptional choice for designers aiming to push the boundaries of power conversion and control in next-generation automotive and industrial systems.

Keywords: Low R DS(on), Automotive Grade (AEC-Q101), OptiMOS™ Technology, High Efficiency, Power Switching.