Infineon SPA20N60CFD: A High-Performance 600V CoolMOS™ CFD2 Power Transistor

Release date:2025-11-10 Number of clicks:139

Infineon SPA20N60CFD: A High-Performance 600V CoolMOS™ CFD2 Power Transistor

In the relentless pursuit of higher efficiency and power density in modern electronic systems, the choice of power switching device is paramount. The Infineon SPA20N60CFD stands out as a superior 600V superjunction MOSFET engineered to meet these demanding challenges. As a member of Infineon's esteemed CoolMOS™ CFD2 family, this transistor is specifically designed for power supply applications, including switched-mode power supplies (SMPS), power factor correction (PFC) stages, and high-speed switching circuits.

The core innovation of the SPA20N60CFD lies in its Charge Compensation principle, which is the foundation of the CoolMOS™ technology. This design drastically reduces the on-state resistance (RDS(on)) for a given silicon area, leading to exceptionally low conduction losses. With an RDS(on) of just 0.19 Ω, this device ensures minimal power dissipation during operation, directly contributing to higher overall system efficiency.

A key feature of the CFD2 series is its integrated fast body diode. Unlike conventional MOSFETs, this diode offers superior reverse recovery characteristics. The softness and speed of this diode significantly reduce switching losses and electromagnetic interference (EMI), making it exceptionally robust in hard-switching and resonant topologies like LLC converters. This intrinsic diode reliability is crucial for applications requiring high durability and continuous operation.

Furthermore, the SPA20N60CFD is optimized for high-frequency switching. The low gate charge (Qg) and low output capacitance (Coss) allow for faster turn-on and turn-off times. This capability enables designers to push switching frequencies higher, which in turn allows for the use of smaller passive components like inductors and transformers, thereby increasing power density and reducing the overall size and cost of the system.

The device also boasts excellent avalanche ruggedness and high pulse current capability, ensuring operational stability even under the most strenuous conditions, such as during overloads or sudden transients. Its high-performance characteristics make it an ideal choice for industrial drives, server and telecom power systems, and renewable energy applications.

ICGOOODFIND: The Infineon SPA20N60CFD CoolMOS™ CFD2 is a benchmark in high-voltage power transistor technology. It masterfully combines ultra-low conduction losses, a robust and fast body diode, and exceptional switching performance. This combination is essential for engineers aiming to develop more efficient, compact, and reliable high-power conversion systems, setting a new standard for performance in its class.

Keywords: CoolMOS™ CFD2, High-Frequency Switching, Integrated Fast Body Diode, Low Conduction Losses, Charge Compensation.

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