Infineon IPA60R190C6 CoolMOS™ Power MOSFET for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics has propelled the evolution of power semiconductor technology. At the forefront of this innovation is Infineon's CoolMOS™ family, with the IPA60R190C6 standing out as a premier choice for high-efficiency switching applications. This superjunction MOSFET is engineered to meet the rigorous demands of switch-mode power supplies (SMPS), power factor correction (PFC) stages, and lighting solutions, delivering a remarkable blend of performance and reliability.

A key metric for any power MOSFET is its on-state resistance, and the IPA60R190C6 excels with an exceptionally low RDS(on) of 190 mΩ at 25°C. This low resistance is fundamental to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. The device is rated for a 650 V drain-source voltage (VDS), providing a robust safety margin and high reliability in off-line power applications that must handle significant voltage spikes and transients.

Beyond its static performance, the device is optimized for dynamic operation. The superjunction technology enables extremely low switching losses, allowing for higher switching frequencies. This is a critical advantage for designers aiming to reduce the size and volume of magnetic components and filters, thereby increasing overall power density. The low gate charge (QG) of 26 nC further enhances this by reducing the driving requirements, simplifying gate driver design, and improving transition speed.

The IPA60R190C6 is housed in a TO-220 FullPAK package. This industry-standard package offers a balanced combination of superior thermal performance and mechanical robustness. The isolated tab simplifies mounting to a heatsink, improving thermal management and system reliability in compact, high-power designs.

ICGOOODFIND: The Infineon IPA60R190C6 CoolMOS™ is a high-performance powerhouse, expertly engineered to push the boundaries of efficiency and power density. Its superior blend of ultra-low RDS(on), fast switching capabilities, and high voltage resilience makes it an indispensable component for engineers designing next-generation, energy-conscious power systems.

Keywords: CoolMOS™, High-Efficiency, Low RDS(on), Superjunction Technology, Switching Applications.