Infineon IRLHM620TRPBF N-Channel Power MOSFET for High-Efficiency Switching Applications

The demand for high-efficiency power management solutions continues to grow across industries such as automotive systems, industrial motor drives, renewable energy inverters, and compact switch-mode power supplies (SMPS). To meet these demands, power MOSFETs must offer low on-state resistance, high switching speed, and superior thermal performance. The Infineon IRLHM620TRPBF stands out as a high-performance N-channel MOSFET engineered specifically for high-efficiency switching applications.

Built using Infineon’s advanced HEXFET technology, this power MOSFET is optimized to minimize conduction and switching losses. Its key feature is an extremely low on-state resistance (RDS(on)) of just 1.6 mΩ (max. at VGS = 10 V), which significantly reduces power dissipation during operation. This leads to higher system efficiency, less heat generation, and the potential for smaller heatsinks or simplified thermal management designs.

The device is housed in a D2PAK (TO-263) package, which offers excellent power dissipation capabilities and is suitable for high-current applications. It supports a continuous drain current (ID) of 195A at 25°C, making it robust enough for demanding high-power environments. Furthermore, its low gate charge (QG) and fast switching characteristics allow for operation at high frequencies, which is crucial for reducing the size of passive components like inductors and capacitors in power circuits.

Another critical advantage is its enhanced avalanche ruggedness, which improves reliability in harsh conditions where voltage spikes may occur. This makes the IRLHM620TRPBF a preferred choice in automotive and industrial applications where operational stability is essential.

ICGOOODFIND:

The Infineon IRLHM620TRPBF combines ultra-low RDS(on), high current capability, and excellent thermal performance in a robust package, making it an ideal solution for designers seeking to maximize efficiency and power density in modern switching power systems.

Keywords:

Power MOSFET, High-Efficiency Switching, Low RDS(on), HEXFET Technology, D2PAK Package